GB10SLT12-220 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
2V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
40µA @ 1200V
|
520pF @ 1V, 1MHz
|
0.8°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
DSI30-12A |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
30A
|
1.29V @ 30A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
40µA @ 1200V
|
10pF @ 400V, 1MHz
|
0.5°C/W Cs
|
-40°C ~ 175°C
|
Through Hole
|
TO-220-2
|
DSI30-12AS-TUB |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
30A
|
1.29V @ 30A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
40µA @ 1200V
|
10pF @ 400V, 1MHz
|
0.25°C/W Cs
|
-40°C ~ 175°C
|
Surface Mount
|
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
|
DSI30-12AS |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
30A
|
1.29V @ 30A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
40µA @ 1200V
|
10pF @ 400V, 1MHz
|
0.25°C/W Cs
|
-40°C ~ 175°C
|
Surface Mount
|
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
|
GB10SLT12-252 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
2V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
40µA @ 1200V
|
520pF @ 1V, 1MHz
|
0.8°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
VS-HFA30PB120PBF |
VISHAY SEMICONDUCTORS |
|
Standard
|
1200V (1.2kV)
|
30A
|
4.1V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
170ns
|
40µA @ 1200V
|
-
|
0.5°C/W Cs
|
-55°C ~ 150°C
|
Through Hole, Radial
|
TO-247-2
|
HFA30PB120 |
VISHAY SEMICONDUCTORS |
|
Standard
|
1200V (1.2kV)
|
30A
|
4.1V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
170ns
|
40µA @ 1200V
|
-
|
0.5°C/W Cs
|
-55°C ~ 150°C
|
Through Hole, Radial
|
TO-247-2
|