| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB10SLT12-220 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 520pF @ 1V, 1MHz | 0.8°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| STTH10LCD06FP | STMICROELECTRONICS | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | 6°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 Full Pack | |
| CPW3-1700-S010B-WP | CREE INC | Silicon Carbide Schottky | 1700V (1.7kV) | 10A | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1700V | 880pF @ 0V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer, Sawn on Foil | |
| C3D10170H | CREE INC | Silicon Carbide Schottky | 1700V (1.7kV) | 14.4A (DC) | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1700V | 827pF @ 0V, 1MHz | 0.65°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-2 | |
| GB10SLT12-252 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 520pF @ 1V, 1MHz | 0.8°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| STTH10LCD06SG-TR | STMICROELECTRONICS | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | 3.5°C/W Jc | 175°C (Max) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STTH10LCD06SB-TR | STMICROELECTRONICS | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | 3.5°C/W Jc | 175°C (Max) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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