| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAP3SLT33-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 3300V (3.3kV) | 300mA (DC) | 2.2V @ 300mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 3300V | 42pF @ 1V, 1MHz | 1.42°C/W Jc | -55°C ~ 175°C | - | - |
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