Diode Type | Silicon Carbide Schottky |
Reverse DC Voltage(Vr) | 3300V (3.3kV) |
Current - Average Rectified (Io) | 300mA (DC) |
Forward Voltage (Vf) | 2.2V @ 300mA |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Reverse Leakage Current @ Vr | 10µA @ 3300V |
Capacitance @ Vr, F | 42pF @ 1V, 1MHz |
Thermal Resistance | 1.42°C/W Jc |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | - |
Package / Case | - |