| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAT750-7-F | DIODES INC | Schottky | 40V | 750mA | 490mV @ 750mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 100µA @ 30V | 175pF @ 0V, 1MHz | 286°C/W Ja | -55°C ~ 125°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| FYV0704SMTF | FAIRCHILD SEMICONDUCTOR CORP | Schottky | 40V | 750mA | 480mV @ 750mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | 250°C/W Ja | -65°C ~ 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| BAT750-7 | DIODES INC | Schottky | 40V | 750mA | 490mV @ 750mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 100µA @ 30V | 175pF @ 0V, 1MHz | 286°C/W Ja | -55°C ~ 125°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| 1N8030-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | 9.52°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| 1N8024-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 750mA | 1.74V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 66pF @ 1V, 1MHz | 9.52°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 |
© 2016 Copyright
