5A,Current - Average Rectified (Io)
TO-220-2,Package / Case
26 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
DHG5I600PA IXYS CORP
Standard 600V 5A 2.2V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 35ns 10µA @ 600V - 3.15°C/W Jc -55°C ~ 150°C Through Hole TO-220-2
SBL530 DIODES INC
Schottky 30V 5A 550mV @ 5A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 30V - 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
SBL535 DIODES INC
Schottky 35V 5A 550mV @ 5A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 35V - 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
SBL540 DIODES INC
Schottky 40V 5A 550mV @ 5A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 40V - 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
SBL545 DIODES INC
Schottky 45V 5A 550mV @ 5A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 45V - 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
SBL550 DIODES INC
Schottky 50V 5A 700mV @ 5A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 50V - 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
SBL560 DIODES INC
Schottky 60V 5A 700mV @ 5A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 60V - 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
GB05SLT12-220 GENESIC SEMICONDUCTOR INC
Silicon Carbide Schottky 1200V (1.2kV) 5A 2V @ 5A No Recovery Time > 500mA (Io) 0ns 20µA @ 1200V 260pF @ 1V, 1MHz - - Through Hole TO-220-2
BYC5-600,127 NXP SEMICONDUCTORS
Standard 500V 5A 2.9V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 100µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
BYC5D-500,127 NXP SEMICONDUCTORS
Standard 500V 5A 2V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 16ns 40µA @ 500V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2