DHG5I600PA |
IXYS CORP |
|
Standard
|
600V
|
5A
|
2.2V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 600V
|
-
|
3.15°C/W Jc
|
-55°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL530 |
DIODES INC |
|
Schottky
|
30V
|
5A
|
550mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 30V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL535 |
DIODES INC |
|
Schottky
|
35V
|
5A
|
550mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 35V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL540 |
DIODES INC |
|
Schottky
|
40V
|
5A
|
550mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 40V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL545 |
DIODES INC |
|
Schottky
|
45V
|
5A
|
550mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 45V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL550 |
DIODES INC |
|
Schottky
|
50V
|
5A
|
700mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 50V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL560 |
DIODES INC |
|
Schottky
|
60V
|
5A
|
700mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 60V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
GB05SLT12-220 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
5A
|
2V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
20µA @ 1200V
|
260pF @ 1V, 1MHz
|
-
|
-
|
Through Hole
|
TO-220-2
|
BYC5-600,127 |
NXP SEMICONDUCTORS |
|
Standard
|
500V
|
5A
|
2.9V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
100µA @ 600V
|
-
|
2.5°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
BYC5D-500,127 |
NXP SEMICONDUCTORS |
|
Standard
|
500V
|
5A
|
2V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
16ns
|
40µA @ 500V
|
-
|
2.5°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|