Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GB05SLT12-220 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 5A | 2V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | |
BYC5D-500,127 | NXP SEMICONDUCTORS | Standard | 500V | 5A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 40µA @ 500V | - | 2.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 |