MUBW40-12T7

MUBW40-12T7

Data Sheet

Attribute
Description
Manufacturer Part Number
MUBW40-12T7
Manufacturer
Description
MODULE IGBT CBI E2
Manufacturer Lead Time
38 weeks

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Product Attributes

Type Description
Category
IGBT Class Trench
Max Collector-Emitter Breakdown 1200V
Maximum Collector Amps 62A
Maximum Power Handling 220W
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
Entry Signal Category 2.5nF @ 25V
Attachment Mounting Style Chassis Mount
Component Housing Style E2

Description

Provides a maximum collector current (Ic) of 62A. Features a DC current gain hFE at Ic evaluated at 2.6V @ 15V, 40A. Designed as Trench IGBT type for effective power switching. Set up with 2.5nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case E2 providing mechanical and thermal shielding. Peak power 220W for device protection. Peak Vce(on) at Vge 2.6V @ 15V, 40A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.

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