MWI100-12A8T
Data Sheet
Attribute
Description
Manufacturer Part Number
MWI100-12A8T
Manufacturer
Description
IGBTs - Arrays,
Modules,
1200V,
160A,
640W
Manufacturer Lead Time
38 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 160A | |
| Maximum Power Handling | 640W | |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 100A | |
| Entry Signal Category | 6.5nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | E3 |
Description
Provides a maximum collector current (Ic) of 160A. Features a DC current gain hFE at Ic evaluated at 2.6V @ 15V, 100A. Designed as NPT IGBT type for effective power switching. Set up with 6.5nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case E3 providing mechanical and thermal shielding. Peak power 640W for device protection. Peak Vce(on) at Vge 2.6V @ 15V, 100A for transistor parameters. Highest collector-emitter breakdown voltage 1200V.