MIO1200-33E11
Data Sheet
Attribute
Description
Manufacturer Part Number
MIO1200-33E11
Manufacturer
Description
IGBTs - Arrays,
Modules,
3300V,
1200A
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 3300V | |
| Maximum Collector Amps | 1200A | |
| Maximum Power Handling | - | |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 1200A | |
| Entry Signal Category | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | E11 |
Description
Provides a maximum collector current (Ic) of 1200A. Features a DC current gain hFE at Ic evaluated at 3.1V @ 15V, 1200A. Designed as NPT IGBT type for effective power switching. Mounting style Chassis Mount for structural integrity. Enclosure/case E11 providing mechanical and thermal shielding. Peak Vce(on) at Vge 3.1V @ 15V, 1200A for transistor parameters. Highest collector-emitter breakdown voltage 3300V.
