MIO1200-25E10
Data Sheet
Attribute
Description
Manufacturer Part Number
MIO1200-25E10
Manufacturer
Description
MOD IGBT SGL SWITCH 2500V E10
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 2500V | |
| Maximum Collector Amps | 1200A | |
| Maximum Power Handling | - | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 1200A | |
| Entry Signal Category | 186nF @ 25V | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | E10 |
Description
Provides a maximum collector current (Ic) of 1200A. Features a DC current gain hFE at Ic evaluated at 2.5V @ 15V, 1200A. Designed as NPT IGBT type for effective power switching. Set up with 186nF @ 25V input type for versatile applications. Mounting style Chassis Mount for structural integrity. Enclosure/case E10 providing mechanical and thermal shielding. Peak Vce(on) at Vge 2.5V @ 15V, 1200A for transistor parameters. Highest collector-emitter breakdown voltage 2500V.