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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Proximity Detection Range | 0.118" (3mm) | |
| Detection Technology Type | Through-Beam | |
| Output Setup Options | Phototransistor | |
| Max Forward DC Current | 50 mA | |
| Maximum Collector Amps | 20 mA | |
| Max Collector-Emitter Breakdown | 35 V | |
| Activation Speed ms | 50µs, 50µs | |
| Ambient Temp Range | -25°C ~ 85°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | PCB Mount |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provides a maximum collector current (Ic) of 20 mA. Provides a maximum DC forward current (If) rated at 50 mA. Mounting style Through Hole for structural integrity. Operating temperature -25°C ~ 85°C for thermal stability. Output configuration Phototransistor for system configuration. Enclosure Tube for component protection or transport. Enclosure/case PCB Mount providing mechanical and thermal shielding. Product condition Active for availability and lifecycle. Response duration 50µs, 50µs for quick operation or detection. Detection distance 0.118" (3mm) for sensors or detectors. Detection method Through-Beam for device functionality. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Highest collector-emitter breakdown voltage 35 V.
