ITR8102

ITR8102
Attribute
Description
Manufacturer Part Number
ITR8102
Description
SENSOR OPT SLOT PHOTOTRANS MODUL
Note : GST will not be applied to orders shipping outside of India

Stock:
70400

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
4130 ₹ 6.47 ₹ 26,721.10
3085 ₹ 7.22 ₹ 22,273.70
2385 ₹ 7.47 ₹ 17,815.95
1735 ₹ 7.72 ₹ 13,394.20
1120 ₹ 7.97 ₹ 8,926.40
460 ₹ 9.70 ₹ 4,462.00

Stock:
300

Distributor: 116

Lead Time: Not specified


Quantity Unit Price Ext. Price
160 ₹ 27.13 ₹ 4,340.80
120 ₹ 27.55 ₹ 3,306.00
80 ₹ 27.98 ₹ 2,238.40
40 ₹ 28.41 ₹ 1,136.40
20 ₹ 28.84 ₹ 576.80

Stock:
20000

Distributor: 113

Lead Time: Not specified


Quantity Unit Price Ext. Price
20000 ₹ 29.28 ₹ 5,85,600.00
400 ₹ 28.66 ₹ 11,464.00
2000 ₹ 27.41 ₹ 54,820.00
4000 ₹ 27.41 ₹ 1,09,640.00
12500 ₹ 26.17 ₹ 3,27,125.00

Stock:
300

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
300 ₹ 40.66 ₹ 12,198.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Proximity Detection Range 0.118" (3mm)
Detection Technology Type Through-Beam
Output Setup Options Phototransistor
Max Forward DC Current 50 mA
Maximum Collector Amps 30 mA
Max Collector-Emitter Breakdown 30 V
Activation Speed ms 15µs
Ambient Temp Range -25°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style Slotted Module

Description

Provides a maximum collector current (Ic) of 30 mA. Provides a maximum DC forward current (If) rated at 50 mA. Mounting style Through Hole for structural integrity. Operating temperature -25°C ~ 85°C for thermal stability. Output configuration Phototransistor for system configuration. Enclosure Bulk for component protection or transport. Enclosure/case Slotted Module providing mechanical and thermal shielding. Product condition Active for availability and lifecycle. Response duration 15µs for quick operation or detection. Detection distance 0.118" (3mm) for sensors or detectors. Detection method Through-Beam for device functionality. Highest collector-emitter breakdown voltage 30 V.

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