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Manufacturer1

FET Type0

Drain to Source Voltage (Vdss)0

Current - Continuous Drain (Id) @ 25°C0

Rds On (Max) @ Id, Vgs0

Vgs(th) (Max) @ Id0

Gate Charge (Qg) @ Vgs0

Input Capacitance (Ciss) @ Vds0

Power - Max0

Mounting Type0

Package / Case0

Manufacturer

CREE INC

Part Number
Manufacturer
Price
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) @ Vgs
Input Capacitance (Ciss) @ Vds
Power - Max
Mounting Type
Package / Case
CREE INC
-
SiCFET N-Channel, Silicon Carbide
1700V (1.7kV)
4.9A (Tc)
1.1 Ohm @ 2A, 20V
2.4V @ 100µA
13nC @ 20V
191pF @ 1000V
69W
Through Hole
TO-247-3
CREE INC
-
SiCFET N-Channel, Silicon Carbide
1200V (1.2kV)
17.7A
196 mOhm @ 10A, 20V
2.5V @ 500µA
32.6nC @ 20V
527pF @ 800V
125W
Through Hole
TO-247-3
CREE INC
-
SiCFET N-Channel, Silicon Carbide
1200V (1.2kV)
31.6A (Tc)
98 mOhm @ 20A, 20V
2.2V @ 1mA
49.2nC @ 20V
950pF @ 1000V
208W
Through Hole
TO-247-3
CREE INC
-
SiCFET N-Channel, Silicon Carbide
1200V (1.2kV)
24A (Tc)
220 mOhm @ 10A, 20V
4V @ 500µA
47.1nC @ 20V
928pF @ 800V
152W
Through Hole
TO-247-3
CREE INC
-
SiCFET N-Channel, Silicon Carbide
1200V (1.2kV)
42A (Tc)
110 mOhm @ 20A, 20V
4V @ 1mA
90.8nC @ 20V
1915pF @ 800V
150W
Through Hole
TO-247-3
CREE INC
-
2 N-Channel (Half Bridge)
1200V (1.2kV)
165A
20 mOhm @ 20A, 20V
3.1V @ 50mA
-
9500pF @ 800V
-
Chassis Mount
Module
CREE INC
-
6 N-Channel (3-Phase Bridge)
1200V (1.2kV)
87A
34 mOhm @ 50A, 20V
2.3V @ 2.5mA
180nC @ 20V
2.810nF @ 800V
337W
Chassis Mount
Module

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