Attribute
Description
Manufacturer Part Number
C2M1000170D
Manufacturer
Description
SIC MOSFET N-CH 1700V 4A TO247
Manufacturer Lead Time
1 week
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Product Attributes

Type Description
Category
FET Type SiCFET N-Channel, Silicon Carbide
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C 4.9A (Tc)
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) @ Vgs 13nC @ 20V
Input Capacitance (Ciss) @ Vds 191pF @ 1000V
Power - Max 69W
Mounting Type Through Hole
Package / Case TO-247-3

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