LPT16ED
Data Sheet
Attribute
Description
Manufacturer Part Number
LPT16ED
Manufacturer
Description
TRANSISTOR NPN BIPOLAR SIGE
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 4V | |
| Transition Freq | 16GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 5.2dB | |
| Maximum Power Handling | 250mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 20mA, 2V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die |
Description
Measures resistance at forward current 16GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 50 @ 20mA, 2V. Offers 16GHz transition frequency for seamless signal modulation. Delivers 5.2dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case Die providing mechanical and thermal shielding. Peak power 250mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 5.2dB for transistor parameters. Highest collector-emitter breakdown voltage 4V.
