SD1275-01

SD1275-01
Attribute
Description
Manufacturer Part Number
SD1275-01
Manufacturer
Description
TRANS NPN RF MICROWAVE VHF M113
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 16V
Transition Freq -
Noise Figure @ f -
Amplification Factor 9dB
Maximum Power Handling 70W
DC Current Gain (hFE) @ Ic, Vce 20 @ 250mA, 5V
Maximum Collector Amps 8A
Attachment Mounting Style Surface Mount
Component Housing Style M113

Description

Provides a maximum collector current (Ic) of 8A. Features a DC current gain hFE at Ic evaluated at 20 @ 250mA, 5V. Delivers 9dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case M113 providing mechanical and thermal shielding. Peak power 70W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 9dB for transistor parameters. Highest collector-emitter breakdown voltage 16V.

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