BLT81,115
Data Sheet
Attribute
Description
Manufacturer Part Number
BLT81,115
Manufacturer
Description
UHF POWER TRANSISTOR,
NPN,
9.5V,
500MA,...
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 9.5V | |
| Transition Freq | 900MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 8dB | |
| Maximum Power Handling | 2W | |
| DC Current Gain (hFE) @ Ic, Vce | 25 @ 300mA, 5V | |
| Maximum Collector Amps | 500mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-261-4, TO-261AA |
Description
Measures resistance at forward current 900MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 25 @ 300mA, 5V. Offers 900MHz transition frequency for seamless signal modulation. Delivers 8dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8dB for transistor parameters. Highest collector-emitter breakdown voltage 9.5V.
