Attribute
Description
Manufacturer Part Number
BFG10/X,215
Manufacturer
Description
TRANS RF NPN 2GHZ 8V SOT143
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 8V | |
| Transition Freq | 1.9GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 7dB | |
| Maximum Power Handling | 400mW | |
| DC Current Gain (hFE) @ Ic, Vce | 25 @ 50mA, 5V | |
| Maximum Collector Amps | 250mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-253-4, TO-253AA |
Description
Measures resistance at forward current 1.9GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 250mA. Features a DC current gain hFE at Ic evaluated at 25 @ 50mA, 5V. Offers 1.9GHz transition frequency for seamless signal modulation. Delivers 7dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case TO-253-4, TO-253AA providing mechanical and thermal shielding. Peak power 400mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 7dB for transistor parameters. Highest collector-emitter breakdown voltage 8V.
