MS3022
Data Sheet
Attribute
Description
Manufacturer Part Number
MS3022
Manufacturer
Description
TRANS RF BIPO 7W 200MA M210
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 45V | |
| Transition Freq | 1GHz ~ 2GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 7dB | |
| Maximum Power Handling | 7W | |
| DC Current Gain (hFE) @ Ic, Vce | 15 @ 100mA, 5V | |
| Maximum Collector Amps | 200mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1GHz ~ 2GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 200mA. Features a DC current gain hFE at Ic evaluated at 15 @ 100mA, 5V. Offers 1GHz ~ 2GHz transition frequency for seamless signal modulation. Delivers 7dB gain to improve signal amplification efficiency. Peak power 7W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 7dB for transistor parameters. Highest collector-emitter breakdown voltage 45V.