Attribute
Description
Manufacturer Part Number
MS2204
Manufacturer
Description
TRANS RF BIPO 600MW 300MA M115
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 20V | |
| Transition Freq | 1.09GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10.8dB | |
| Maximum Power Handling | 600mW | |
| DC Current Gain (hFE) @ Ic, Vce | 15 @ 100mA, 5V | |
| Maximum Collector Amps | 300mA | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.09GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 300mA. Features a DC current gain hFE at Ic evaluated at 15 @ 100mA, 5V. Offers 1.09GHz transition frequency for seamless signal modulation. Delivers 10.8dB gain to improve signal amplification efficiency. Peak power 600mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10.8dB for transistor parameters. Highest collector-emitter breakdown voltage 20V.