MS2553C
Data Sheet
Attribute
Description
Manufacturer Part Number
MS2553C
Manufacturer
Description
TRANS RF BIPO 175W 4A M220
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 25V | |
| Transition Freq | 1.025GHz ~ 1.15GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 10.5dB | |
| Maximum Power Handling | 175W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 500mA, 5V | |
| Maximum Collector Amps | 4A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.025GHz ~ 1.15GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Features a DC current gain hFE at Ic evaluated at 20 @ 500mA, 5V. Offers 1.025GHz ~ 1.15GHz transition frequency for seamless signal modulation. Delivers 10.5dB gain to improve signal amplification efficiency. Peak power 175W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10.5dB for transistor parameters. Highest collector-emitter breakdown voltage 25V.