Attribute
Description
Manufacturer Part Number
MS2205
Manufacturer
Description
TRANS RF BIPO 21.9W 1A M220
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 45V | |
| Transition Freq | 1.025GHz ~ 1.15GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 9.5dB | |
| Maximum Power Handling | 21.9W | |
| DC Current Gain (hFE) @ Ic, Vce | 10 @ 100mA, 5V | |
| Maximum Collector Amps | 1A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.025GHz ~ 1.15GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 10 @ 100mA, 5V. Offers 1.025GHz ~ 1.15GHz transition frequency for seamless signal modulation. Delivers 9.5dB gain to improve signal amplification efficiency. Peak power 21.9W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 9.5dB for transistor parameters. Highest collector-emitter breakdown voltage 45V.