MS1008

MS1008

Data Sheet

Attribute
Description
Manufacturer Part Number
MS1008
Description
TRANS RF BIPO 233W 10A TO-220AC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 55V
Transition Freq 30MHz
Noise Figure @ f -
Amplification Factor 14dB
Maximum Power Handling 233W
DC Current Gain (hFE) @ Ic, Vce 15 @ 1.4A, 6V
Maximum Collector Amps 10A
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 30MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Features a DC current gain hFE at Ic evaluated at 15 @ 1.4A, 6V. Offers 30MHz transition frequency for seamless signal modulation. Delivers 14dB gain to improve signal amplification efficiency. Peak power 233W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 14dB for transistor parameters. Highest collector-emitter breakdown voltage 55V.

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