MRF5812GR1
Data Sheet
Attribute
Description
Manufacturer Part Number
MRF5812GR1
Manufacturer
Description
TRANS NPN 15V 200MA 8-SOIC
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 15V | |
| Transition Freq | 5GHz | |
| Noise Figure @ f | 2dB ~ 3dB @ 500MHz | |
| Amplification Factor | 13dB ~ 15.5dB | |
| Maximum Power Handling | 1.25W | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 50mA, 5V | |
| Maximum Collector Amps | 200mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 5GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 200mA. Features a DC current gain hFE at Ic evaluated at 50 @ 50mA, 5V. Offers 5GHz transition frequency for seamless signal modulation. Delivers 13dB ~ 15.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 1.25W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13dB ~ 15.5dB for transistor parameters. Highest collector-emitter breakdown voltage 15V.
