Attribute
Description
Manufacturer Part Number
BFG425W,135
Manufacturer
Description
TRANS RF NPN 25GHZ 4.5V SOT343R
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 4.5V | |
| Transition Freq | 25GHz | |
| Noise Figure @ f | 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz | |
| Amplification Factor | 20dB | |
| Maximum Power Handling | 135mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 25mA, 2V | |
| Maximum Collector Amps | 30mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Measures resistance at forward current 25GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 30mA. Features a DC current gain hFE at Ic evaluated at 50 @ 25mA, 2V. Offers 25GHz transition frequency for seamless signal modulation. Delivers 20dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-82A, SOT-343 providing mechanical and thermal shielding. Peak power 135mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 20dB for transistor parameters. Highest collector-emitter breakdown voltage 4.5V.
