MRF321

MRF321

Data Sheet

Attribute
Description
Manufacturer Part Number
MRF321
Description
TRANS RF NPN 33V 1.1A 244-04
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 33V
Transition Freq -
Noise Figure @ f -
Amplification Factor 13dB
Maximum Power Handling 10W
DC Current Gain (hFE) @ Ic, Vce 20 @ 500mA, 5V
Maximum Collector Amps 1.1A
Attachment Mounting Style Chassis Mount
Component Housing Style 244-04

Description

Provides a maximum collector current (Ic) of 1.1A. Features a DC current gain hFE at Ic evaluated at 20 @ 500mA, 5V. Delivers 13dB gain to improve signal amplification efficiency. Mounting style Chassis Mount for structural integrity. Enclosure/case 244-04 providing mechanical and thermal shielding. Peak power 10W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13dB for transistor parameters. Highest collector-emitter breakdown voltage 33V.

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