MRF317

MRF317

Data Sheet

Attribute
Description
Manufacturer Part Number
MRF317
Description
TRANS RF NPN 35V 12A 316-01
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 35V
Transition Freq -
Noise Figure @ f -
Amplification Factor 10dB
Maximum Power Handling 100W
DC Current Gain (hFE) @ Ic, Vce 10 @ 5A, 5V
Maximum Collector Amps 12A
Attachment Mounting Style Chassis Mount
Component Housing Style 316-01

Description

Provides a maximum collector current (Ic) of 12A. Features a DC current gain hFE at Ic evaluated at 10 @ 5A, 5V. Delivers 10dB gain to improve signal amplification efficiency. Mounting style Chassis Mount for structural integrity. Enclosure/case 316-01 providing mechanical and thermal shielding. Peak power 100W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Highest collector-emitter breakdown voltage 35V.

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