Attribute
Description
Manufacturer Part Number
BFR 193W H6327
Manufacturer
Description
TRANS RF NPN 12V 80MA SOT323
Manufacturer Lead Time
16 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 8GHz | |
| Noise Figure @ f | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | |
| Amplification Factor | 10.5dB ~ 16dB | |
| Maximum Power Handling | 580mW | |
| DC Current Gain (hFE) @ Ic, Vce | 70 @ 30mA, 8V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current 8GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 70 @ 30mA, 8V. Offers 8GHz transition frequency for seamless signal modulation. Delivers 10.5dB ~ 16dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 580mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10.5dB ~ 16dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
