Attribute
Description
Manufacturer Part Number
BFR 193L3 E6327
Manufacturer
Description
TRANSISTOR RF NPN 12V TSLP-3
Note :
GST will not be applied to orders shipping outside of India
Stock: 5435
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 27.59 | ₹ 27.59 |
| 10 | ₹ 16.73 | ₹ 167.30 |
| 100 | ₹ 13.26 | ₹ 1,326.00 |
| 500 | ₹ 12.55 | ₹ 6,275.00 |
| 1000 | ₹ 12.02 | ₹ 12,020.00 |
| 2500 | ₹ 11.84 | ₹ 29,600.00 |
| 5000 | ₹ 11.57 | ₹ 57,850.00 |
| 10000 | ₹ 10.32 | ₹ 1,03,200.00 |
| 15000 | ₹ 9.97 | ₹ 1,49,550.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 8GHz | |
| Noise Figure @ f | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | |
| Amplification Factor | 12.5dB ~ 19dB | |
| Maximum Power Handling | 580mW | |
| DC Current Gain (hFE) @ Ic, Vce | 70 @ 30mA, 8V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-101, SOT-883 |
Description
Measures resistance at forward current 8GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 70 @ 30mA, 8V. Offers 8GHz transition frequency for seamless signal modulation. Delivers 12.5dB ~ 19dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-101, SOT-883 providing mechanical and thermal shielding. Peak power 580mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12.5dB ~ 19dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
