Attribute
Description
Manufacturer Part Number
ULN2805A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
55 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 8 NPN Darlington | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V | |
| Maximum Power Handling | 2.25W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 18-DIP (0.300", 7.62mm) |
Description
Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 1.6V @ 500µA, 350mA. Mounting style Through Hole for structural integrity. Enclosure/case 18-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Peak power 2.25W for device protection. Type of transistor 8 NPN Darlington for circuit architecture. Peak Vce(on) at Vge 1.6V @ 500µA, 350mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
