ULN2803A
Data Sheet
Attribute
Description
Manufacturer Part Number
ULN2803A
Manufacturer
Description
ULN Series 50V 500 mA Integral Suppression Diode Eight Darli...
Note :
GST will not be applied to orders shipping outside of India
Stock: 3046
Distributor: 128
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 4000 | ₹ 72.71 | ₹ 2,90,840.00 |
| 1000 | ₹ 72.89 | ₹ 72,890.00 |
| 500 | ₹ 84.82 | ₹ 42,410.00 |
| 100 | ₹ 85.80 | ₹ 8,580.00 |
| 50 | ₹ 92.56 | ₹ 4,628.00 |
| 10 | ₹ 94.34 | ₹ 943.40 |
| 1 | ₹ 95.23 | ₹ 95.23 |
Stock: 87087
Distributor: 116
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 82.94 | ₹ 82.94 |
Stock: 2210
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 111.25 | ₹ 11,125.00 |
| 40 | ₹ 112.14 | ₹ 4,485.60 |
| 20 | ₹ 117.48 | ₹ 2,349.60 |
| 10 | ₹ 124.60 | ₹ 1,246.00 |
| 1 | ₹ 166.43 | ₹ 166.43 |
Stock: 42404
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 167.32 | ₹ 167.32 |
| 10 | ₹ 119.26 | ₹ 1,192.60 |
| 100 | ₹ 107.69 | ₹ 10,769.00 |
| 500 | ₹ 103.24 | ₹ 51,620.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 8 NPN Darlington | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V | |
| Maximum Power Handling | 2.25W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 18-DIP (0.300", 7.62mm) |
Description
Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 1.6V @ 500µA, 350mA. Mounting style Through Hole for structural integrity. Enclosure/case 18-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Peak power 2.25W for device protection. Type of transistor 8 NPN Darlington for circuit architecture. Peak Vce(on) at Vge 1.6V @ 500µA, 350mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
