Attribute
Description
Manufacturer Part Number
STX93003
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
1A,
400V
Note :
GST will not be applied to orders shipping outside of India
Stock: 4828
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 83.66 | ₹ 83.66 |
| 10 | ₹ 51.62 | ₹ 516.20 |
| 100 | ₹ 33.82 | ₹ 3,382.00 |
| 500 | ₹ 25.81 | ₹ 12,905.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 500mA | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 16 @ 350mA, 5V | |
| Maximum Power Handling | 1.5W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 500mV @ 100mA, 500mA. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) providing mechanical and thermal shielding. Peak power 1.5W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 500mV @ 100mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 400V.
