STX13003-AP

STX13003-AP
Attribute
Description
Manufacturer Part Number
STX13003-AP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 1A, 400V
Note : GST will not be applied to orders shipping outside of India

Stock:
4000

Distributor: 113

Lead Time: Not specified

Quantity Unit Price Ext. Price
4000 ₹ 9.47 ₹ 37,880.00
6000 ₹ 9.22 ₹ 55,320.00
10000 ₹ 9.10 ₹ 91,000.00
20000 ₹ 8.96 ₹ 1,79,200.00
40000 ₹ 8.72 ₹ 3,48,800.00

Stock:
18308

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 79.21 ₹ 79.21
10 ₹ 49.84 ₹ 498.40
100 ₹ 32.04 ₹ 3,204.00
500 ₹ 24.92 ₹ 12,460.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 1A
Max Collector-Emitter Breakdown 400V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
Collector Cutoff Max 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 500mA, 2V
Maximum Power Handling 1.5W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Description

Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 500mA, 1.5A. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads providing mechanical and thermal shielding. Peak power 1.5W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.5V @ 500mA, 1.5A for transistor parameters. Highest collector-emitter breakdown voltage 400V.

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