Attribute
Description
Manufacturer Part Number
STB13005-1
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
4A,
400V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V | |
| Maximum Power Handling | 75W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1V @ 1A, 4A. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 75W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1V @ 1A, 4A for transistor parameters. Highest collector-emitter breakdown voltage 400V.
