Attribute
Description
Manufacturer Part Number
2N6036
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 176
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 104 | ₹ 25.03 | ₹ 2,603.12 |
| 28 | ₹ 43.39 | ₹ 1,214.92 |
| 7 | ₹ 66.75 | ₹ 467.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Collector Cutoff Max | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V | |
| Maximum Power Handling | 40W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 100µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 3V @ 40mA, 4A. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 3V @ 40mA, 4A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
