Attribute
Description
Manufacturer Part Number
BUL743
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
12A,
500V
Note :
GST will not be applied to orders shipping outside of India
Stock: 2890
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 238.52 | ₹ 238.52 |
| 10 | ₹ 117.48 | ₹ 1,174.80 |
| 100 | ₹ 106.80 | ₹ 10,680.00 |
| 500 | ₹ 85.44 | ₹ 42,720.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 12A | |
| Max Collector-Emitter Breakdown | 500V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2.5A, 10A | |
| Collector Cutoff Max | 250µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 2A, 3V | |
| Maximum Power Handling | 100W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 250µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 12A. Offers a collector cutoff current rated at 250µA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 2.5A, 10A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 100W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.5V @ 2.5A, 10A for transistor parameters. Highest collector-emitter breakdown voltage 500V.
