Attribute
Description
Manufacturer Part Number
BUL216
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
4A,
800V
Note :
GST will not be applied to orders shipping outside of India
Stock: 4990
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 262.55 | ₹ 262.55 |
| 10 | ₹ 130.83 | ₹ 1,308.30 |
| 100 | ₹ 117.48 | ₹ 11,748.00 |
| 500 | ₹ 96.12 | ₹ 48,060.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 800V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 660mA, 2A | |
| Collector Cutoff Max | 250µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 400mA, 5V | |
| Maximum Power Handling | 90W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 250µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 250µA. Features a DC current gain hFE at Ic evaluated at 3V @ 660mA, 2A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 90W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 3V @ 660mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 800V.
