Attribute
Description
Manufacturer Part Number
BD679A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 3285
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 37.03 | ₹ 92,575.00 |
| 1250 | ₹ 37.98 | ₹ 47,475.00 |
| 500 | ₹ 38.46 | ₹ 19,230.00 |
| 250 | ₹ 39.41 | ₹ 9,852.50 |
| 50 | ₹ 39.88 | ₹ 1,994.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A | |
| Collector Cutoff Max | 500µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V | |
| Maximum Power Handling | 40W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 2.8V @ 40mA, 2A. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 2.8V @ 40mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
