2SA2180
Data Sheet
Attribute
Description
Manufacturer Part Number
2SA2180
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
5A,
50V
Note :
GST will not be applied to orders shipping outside of India
Stock: 2883
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 16.04 | ₹ 16,04,000.00 |
| 10000 | ₹ 19.13 | ₹ 1,91,300.00 |
| 1000 | ₹ 21.47 | ₹ 21,470.00 |
| 500 | ₹ 23.27 | ₹ 11,635.00 |
| 100 | ₹ 25.86 | ₹ 2,586.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 5A | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 125mA, 2.5A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 125mA, 2V | |
| Maximum Power Handling | 2W | |
| Transition Freq | 130MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Provides a maximum collector current (Ic) of 5A. Features a DC current gain hFE at Ic evaluated at 500mV @ 125mA, 2.5A. Offers 130MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 500mV @ 125mA, 2.5A for transistor parameters. Highest collector-emitter breakdown voltage 50V.
