2SC4153

2SC4153

Data Sheet

Attribute
Description
Manufacturer Part Number
2SC4153
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 7A, 120V
Note : GST will not be applied to orders shipping outside of India

Stock:
744

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
32000 ₹ 57.23 ₹ 18,31,360.00
16000 ₹ 59.64 ₹ 9,54,240.00
4000 ₹ 64.22 ₹ 2,56,880.00
2000 ₹ 65.37 ₹ 1,30,740.00
1000 ₹ 68.81 ₹ 68,810.00
200 ₹ 75.69 ₹ 15,138.00
100 ₹ 79.70 ₹ 7,970.00
50 ₹ 87.16 ₹ 4,358.00
10 ₹ 132.46 ₹ 1,324.60
1 ₹ 188.08 ₹ 188.08

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 7A
Max Collector-Emitter Breakdown 120V
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Collector Cutoff Max 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A, 4V
Maximum Power Handling 30W
Transition Freq 30MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 7A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 300mA, 3A. Offers 30MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 30W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 300mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 120V.

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