2SA1567

2SA1567

Data Sheet

Attribute
Description
Manufacturer Part Number
2SA1567
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 12A, 50V
Note : GST will not be applied to orders shipping outside of India

Stock:
685

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
16000 ₹ 59.10 ₹ 9,45,600.00
4000 ₹ 62.51 ₹ 2,50,040.00
2000 ₹ 63.07 ₹ 1,26,140.00
1000 ₹ 65.35 ₹ 65,350.00
500 ₹ 69.89 ₹ 34,945.00
200 ₹ 72.17 ₹ 14,434.00
100 ₹ 73.87 ₹ 7,387.00
50 ₹ 80.69 ₹ 4,034.50
10 ₹ 121.60 ₹ 1,216.00
1 ₹ 175.58 ₹ 175.58

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 12A
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 350mV @ 300mA, 6A
Collector Cutoff Max 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 6A, 1V
Maximum Power Handling 35W
Transition Freq 40MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 12A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 350mV @ 300mA, 6A. Offers 40MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 35W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 350mV @ 300mA, 6A for transistor parameters. Highest collector-emitter breakdown voltage 50V.

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