2SA1694

2SA1694

Data Sheet

Attribute
Description
Manufacturer Part Number
2SA1694
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 8A, 120V
Note : GST will not be applied to orders shipping outside of India

Stock:
650

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
16000 ₹ 96.12 ₹ 15,37,920.00
4000 ₹ 105.91 ₹ 4,23,640.00
2000 ₹ 110.36 ₹ 2,20,720.00
1000 ₹ 113.03 ₹ 1,13,030.00
500 ₹ 129.94 ₹ 64,970.00
100 ₹ 159.31 ₹ 15,931.00
50 ₹ 189.57 ₹ 9,478.50
10 ₹ 226.06 ₹ 2,260.60
1 ₹ 345.32 ₹ 345.32

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 8A
Max Collector-Emitter Breakdown 120V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 3A, 4V
Maximum Power Handling 80W
Transition Freq 20MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-3P-3 Full Pack

Description

Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 300mA, 3A. Offers 20MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-3 Full Pack providing mechanical and thermal shielding. Peak power 80W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 1.5V @ 300mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 120V.

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