2SC3851A

2SC3851A

Data Sheet

Attribute
Description
Manufacturer Part Number
2SC3851A
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 4A, 80V
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Stock:
983

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
32000 ₹ 34.09 ₹ 10,90,880.00
16000 ₹ 36.08 ₹ 5,77,280.00
4000 ₹ 39.83 ₹ 1,59,320.00
2000 ₹ 40.91 ₹ 81,820.00
1000 ₹ 43.81 ₹ 43,810.00
200 ₹ 49.44 ₹ 9,888.00
100 ₹ 52.90 ₹ 5,290.00
50 ₹ 64.78 ₹ 3,239.00
10 ₹ 71.03 ₹ 710.30
5 ₹ 76.71 ₹ 383.55

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 4A
Max Collector-Emitter Breakdown 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Cutoff Max 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 4V
Maximum Power Handling 25W
Transition Freq 15MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 200mA, 2A. Offers 15MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 25W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 80V.

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