2N3439UA
Data Sheet
Attribute
Description
Manufacturer Part Number
2N3439UA
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
350V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA | |
| Collector Cutoff Max | 5µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V | |
| Maximum Power Handling | 800mW | |
| Transition Freq | - | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 5µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 5µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 4mA, 50mA. Peak power 800mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 4mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 350V.
