2N2369A
Data Sheet
Attribute
Description
Manufacturer Part Number
2N2369A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
15V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | - | |
| Max Collector-Emitter Breakdown | 15V | |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V | |
| Maximum Power Handling | 500mW | |
| Transition Freq | - | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 450mV @ 10mA, 100mA. Peak power 500mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 450mV @ 10mA, 100mA for transistor parameters. Highest collector-emitter breakdown voltage 15V.
