ZTX855
Data Sheet
Attribute
Description
Manufacturer Part Number
ZTX855
Manufacturer
Description
ZTX855 Series NPN 5 A 150 V Silicon Planar Medium Power Tran...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V | |
| Maximum Power Handling | 1.2W | |
| Transition Freq | 90MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | E-Line-3 |
Description
Provides a maximum collector current (Ic) of 4A. Features a DC current gain hFE at Ic evaluated at 260mV @ 400mA, 4A. Offers 90MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case E-Line-3 providing mechanical and thermal shielding. Peak power 1.2W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 260mV @ 400mA, 4A for transistor parameters. Highest collector-emitter breakdown voltage 150V.
