ZTX649
Data Sheet
Attribute
Description
Manufacturer Part Number
ZTX649
Manufacturer
Description
ZTX649 Series NPN 2 A 25 V Silicon Planar Medium Power Trans...
Manufacturer Lead Time
28 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 2A | |
| Max Collector-Emitter Breakdown | 25V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V | |
| Maximum Power Handling | 1W | |
| Transition Freq | 240MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | E-Line-3 |
Description
Provides a maximum collector current (Ic) of 2A. Features a DC current gain hFE at Ic evaluated at 500mV @ 200mA, 2A. Offers 240MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case E-Line-3 providing mechanical and thermal shielding. Peak power 1W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 25V.
