XP2535GEY
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | XP2535 | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | Logic Level Gate, 1.8V Drive | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4.6A (Ta), 3.1A (Ta) | |
| Max On-State Resistance | 32mOhm @ 3A, 4.5V, 80mOhm @ 2A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 14.4nC @ 4.5V, 12.8nC @ 4.5V | |
| Max Input Cap at Vds | 960pF @ 10V, 1024pF @ 10V | |
| Maximum Power Handling | 1.13W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 | |
| Vendor Package Type | SOT-26 |
Description
Provided in a setup characterized as N and P-Channel. Supports a continuous drain current (Id) of 4.6A (Ta), 3.1A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Provides FET characteristics categorized as Logic Level Gate, 1.8V Drive. Guarantees maximum 14.4nC @ 4.5V, 12.8nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 14.4nC @ 4.5V, 12.8nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 960pF @ 10V, 1024pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 960pF @ 10V, 1024pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case SOT-23-6 providing mechanical and thermal shielding. Enclosure type SOT-26 ensuring device integrity. Peak power 1.13W (Ta) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 14.4nC @ 4.5V, 12.8nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 32mOhm @ 3A, 4.5V, 80mOhm @ 2A, 4.5V for MOSFET criteria. Product or component classification series XP2535. Manufacturer package type SOT-26 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
