Stock: 50
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 588.97 | ₹ 29,448.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | EPAD® | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 4 N-Channel, Matched Pair | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 10.6V | |
| Continuous Drain Current at 25C | 12mA, 3mA | |
| Max On-State Resistance | 500Ohm @ 4.8V | |
| Max Threshold Gate Voltage | 810mV @ 1µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 2.5pF @ 5V | |
| Maximum Power Handling | 500mW | |
| Ambient Temp Range | 0°C ~ 70°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 16-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 16-SOIC |
Description
Provided in a setup characterized as 4 N-Channel, Matched Pair. Supports a continuous drain current (Id) of 12mA, 3mA at 25°C. Supports Vdss drain-to-source voltage rated at 10.6V. The highest input capacitance is 2.5pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 2.5pF @ 5V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 16-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 16-SOIC ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 500Ohm @ 4.8V for MOSFET criteria. Product or component classification series EPAD®. Manufacturer package type 16-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 810mV @ 1µA for MOSFET threshold level.
